Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Patent
1996-06-17
1997-11-18
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
117 87, 117921, 117950, C30B 900
Patent
active
056883200
ABSTRACT:
Aluminum nitride whiskers are produced by reducing alumina with carbon in a nitrogen atmosphere, at a temperature of 1800.degree. to 2000.degree. C., in the presence of a growth activator containing a solvent element, according to a process that essentially comprises the step of periodically feeding, through the working area of a horizontal furnace equipped with a graphite heating device, counter to a flow of nitrogen, a graphite container charged with a mixture of alumina, carbon and carbonyl iron, as a growth activator, which is present in an amount capable of implementing the VLS mechanism, the time taken by the container to pass through the working zone being in the range of 20 to 120 minutes.
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patent: 4917877 (1990-04-01), Oguni et al.
patent: 5190738 (1993-03-01), Parent
patent: 5246683 (1993-09-01), Parent et al.
Katsutoshi Komeya et al, "Synthesis of AIN Powder by Carbothermal Reduction-Nitridation Method", International Edition 101 (1993) Apr., No. 4.
Gorelov Yurii Alexeevich
Gribkov Vladimir Nikolaevich
Lyasota Piotr Phiodorovich
Shchetanov Boris Vladimirovich
Silaev Vladimir Alexandrovich
Garrett Felisa
Societe Nationale Industrielle et Aerospatiale
VIAM-All Russian Institut of Aviation Materials
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