Process for manufacturing a voltage non-linear resistor and a zi

Details Process for manufacturing a voltage non-linear resistor and a zi Process for manufacturing a voltage non-linear resistor and a zi

1991-11-22

1993-10-05

Bell, Mark L.

Chemistry of inorganic compounds

Oxygen or compound thereof

Metal containing

423622, C01G 902, C01G 903

Patent

active

052502813

ABSTRACT:
A voltage non-linear resistor element mainly comprising ZnO, substantially free from internal defects, exhibiting an excellent current impulse withstand capability, can be manufactured by a process wherein an SiC inclusion in the starting ZnO powder is restricted to at most 10 ppm, preferably at most 0.1 ppm, by weight, whereby formation of closed pores in the element is prevented, which is otherwise caused by decomposition of considerable amount of SiC during firing. The starting ZnO powder has an average particle diameter (R) of 0.1-2.0 .mu.m, preferably 0.3-0.8 .mu.m, a particle size distribution within the range of between 0.5R and 2R, of at least 70%, preferably 80%, by weight, needle-like crystals of at most 20%, preferably at most 10%, by weight, and an SiC content as an impurity of at most 10 ppm, preferably at most 0.1 ppm, by weight.

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