Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1978-12-06
1979-09-25
Dean, R.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148174, 156612, 219 1049R, 219 1067, 427 87, 427248R, 427299, 118719, H01L 21205, H01L 21302
Patent
active
041689984
ABSTRACT:
Semiconductor epitaxial wafers consisting of an epitaxial film and its substrate can be removed, in accordance with the present invention, from a substrate supporting component, without breaking the wafers into pieces after completion of vapor growth. The carbonaceous powder according to the present invention can greatly and effectively decrease the breaking of wafers, as compared with the conventional SiO.sub.2 or SiC-coated substrate supporting components.
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Luther, L. C., "Bulk Growth of GaP by Halogen Vapor Transport", Metallurgical Transactions, vol. 1, Mar. 1970, pp. 593-601.
Goemans et al., "Control of Slip . . . with Profiled Susceptors", J. Crystal Growth, vol. 31, 1975, pp. 308-311.
Burd, J. W., "Multi-Wafer Growth System . . . GaAs.sub.1-x P.sub.x ", Transactions Metallurgical Soc. Aime, vol. 245, Mar. 1969, p. 573.
Shaw, D. W., "Effects of Vapor Composition . . . Gallium Arsenine . . .", J. Electrochem. Soc., Solid State Science, vol. 115, No. 7, Jul. 1968, p. 778.
Fujita Hisanori
Hasegawa Shinichi
Dean R.
Mitsubishi Monsanto Chemical Co.
Saba W. G.
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