Process for manufacturing a solid-state pick-up device

Details Process for manufacturing a solid-state pick-up device Process for manufacturing a solid-state pick-up device

1996-08-02

1999-06-08

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

H01L 2100

Patent

active

059100133

ABSTRACT:
A V-H transfer section is formed by the following steps: N+-type impurities are first ion-implanted in such a manner that they spread out into an area larger than a channel of a vertical transfer register. An electrode of the vertical transfer register and electrodes of a horizontal transfer register are then formed. Thereafter, P+-type impurities are implanted into the electrode of the vertical transfer register and the electrodes of the horizontal transfer register in a self-alignment manner.

REFERENCES:
patent: 4460912 (1984-07-01), Takeshita et al.
patent: 4691218 (1987-09-01), Boudewijns
patent: 5324669 (1994-06-01), Kudora et al.

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