Process for manufacturing a solid state image pickup device havi

Fishing – trapping – and vermin destroying

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437 53, 437154, 437155, H01L 21339

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053246691

ABSTRACT:
The impurity density of a photoelectric transducer n-layer (7) and the impurity density of a p-layer ( 6 ) of an impurity region in which the electric transducer (7) and a transfer channel (9) are formed, are each distributed to have its maximum value in a more interior part from the surface of a semiconductor substrate (5). Alternatively, i) a thin, high-density p-layer (34) and ii) a thick, low-density p-layer (33) of an impurity region in which the electric transducer (7) and the transfer channel (9 ) are formed may be formed. Each minimum potential in these two p-layers (33, 34) is made to have a different dependence on the voltage applied to an n-type semiconductor substrate ( 5). The thick, low-density p-layer ( 33 ) is formed in such a way that it comes into contact with part of the photoelectric transducer n-layer (7) at its bottom portion. The above constitution can bring about a solid-state image pickup device that can prevent the blooming phenomenon, causes less residual images, and can operate as an electronic shutter with ease.

REFERENCES:
patent: 4814848 (1989-03-01), Akimoto et al.
patent: 4831426 (1989-05-01), Kimata et al.
patent: 5118631 (1992-06-01), Dyck et al.
patent: 5191399 (1993-03-01), Maegawa et al.
Patent Abstracts of Japan, vol. 11, No. 304 (E-545) (2751), Oct. 3, 1987 & JP A-62-629369 (Victor Co. of Japan, Ltd.); May 6, 1987.
Patent Abstracts of Japan, vol. 10, No. 24 (E-377) (2081), Jan. 30, 1986 & JP-A-60-182,768 (Sony K.K.) Sep. 18, 1985.
Patent Abstracts of Japan, vol. 11, No. 355 (E-558) (2802), Nov. 19, 1987 & JP-A-62-131,566 (Matsushita Electronics Corp.) Jun. 13, 1987.

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