Process for manufacturing a solar cell

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C136S256000

Reexamination Certificate

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07071018

ABSTRACT:
Process for incorporating a back surface field into a silicon solar cell by depositing a layer of aluminium on the rear surface of the cell, sintering the aluminium at a temperature between 700 and 1000° C., exposing the cell to an atmosphere of a compound of Group V element and diffusing at a temperature of between 950 and 1000°C. so as to dope exposed p-type silicon surfaces with the Group V element. The step of exposing the cell to an atmosphere of a compound of a Group V element is carried separately from the step of sintering the aluminium layer, and subsequent to the step of depositing a layer of aluminium on the rear surface of the cell.

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