Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal
Patent
1997-10-09
2000-01-25
Mulpuri, Savitri
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
438 98, 438142, H01L 2144
Patent
active
060177756
ABSTRACT:
The invention relates to a process for manufacturing a sensor with a metal electrode in an MOS structure. During the MOS process, a sensing region with a structure for the metal electrode is formed, this structure being made of a material having predetermined adhesion properties for metals, the sensing region being uncovered by etching the passivating layer, and a metallization of the surface of the MOS structure being carried out in which the metal layer adheres only to the structure for the metal electrode.
REFERENCES:
patent: 4948257 (1990-08-01), Jain et al.
patent: 5342806 (1994-08-01), Asahina
Gahle Hans-Jurgen
Igel Guenter
Micronas Intermetall GmbH
Mulpuri Savitri
Plevy Arthur L.
LandOfFree
Process for manufacturing a sensor with a metal electrode in a m does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for manufacturing a sensor with a metal electrode in a m, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for manufacturing a sensor with a metal electrode in a m will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2315305