Process for manufacturing a sensor with a metal electrode in a m

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal

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438 98, 438142, H01L 2144

Patent

active

060177756

ABSTRACT:
The invention relates to a process for manufacturing a sensor with a metal electrode in an MOS structure. During the MOS process, a sensing region with a structure for the metal electrode is formed, this structure being made of a material having predetermined adhesion properties for metals, the sensing region being uncovered by etching the passivating layer, and a metallization of the surface of the MOS structure being carried out in which the metal layer adheres only to the structure for the metal electrode.

REFERENCES:
patent: 4948257 (1990-08-01), Jain et al.
patent: 5342806 (1994-08-01), Asahina

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