Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2011-03-15
2011-03-15
Toledo, Fernando L (Department: 2895)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S404000, C438S405000, C438S413000, C438S442000
Reexamination Certificate
active
07906406
ABSTRACT:
A process for manufacturing a semiconductor wafer including SOI-insulation wells includes forming, in a die region of a semiconductor body, buried cavities and semiconductor structural elements, which traverse the buried cavities and are distributed in the die region. The process moreover includes the step of oxidizing selectively first adjacent semiconductor structural elements, arranged inside a closed region, and preventing oxidation of second semiconductor structural elements outside the closed region, so as to form a die buried dielectric layer selectively inside the closed region.
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T. Sato et al., “A New Substrate Engineering for the Formation of Empty Space in Silicon (ESS) Induced by Silicon Surface Migration,” IEDM 1999, pp. 517-520.
Barlocchi Gabriele
Corona Pietro
Villa Flavio Francesco
Dulka John P
Graybeal Jackson LLP
Jablonski Kevin D.
Jorgenson Lisa K.
STMicroelectronics S.r.l.
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