Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate
Patent
1999-11-23
2000-12-26
Niebling, John F.
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Thinning of semiconductor substrate
438455, 438458, 257347, 156 16, H01L 2130, H01L 2146
Patent
active
061658731
ABSTRACT:
This invention relates to a process for manufacturing a semiconductor integrated circuit device comprising hydrogen annealing where a silicon substrate on which a device structure is formed and an interlayer insulating film is deposited is annealed in an atmosphere of hydrogen, comprising removing a substrate material on a substrate surface opposite to the surface on which a device structure is formed (substrate rear face), to make the substrate thinner before the hydrogen annealing; and processing the rear face for removing damages due to crystal defects and scratches generated on the rear face. According to this invention, hydrogen annealing can improve device properties and reliability, regardless of a device structure on the substrate surface, and a semiconductor integrated circuit device can be manufactured in a higher yield.
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NEC Corporation
Niebling John F.
Simkovic Viktor
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