Process for manufacturing a semiconductor device having a contac

Details Process for manufacturing a semiconductor device having a contac Process for manufacturing a semiconductor device having a contac

1988-03-17

1990-03-13

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437241, 437981, 156646, 156657, H01L 21285, H01L 21318

Patent

active

049083333

ABSTRACT:
An insulating film formed under a conductive film has a side wall defining a contact window and having the shape of a gently inclined curvilinear surface, so that the insulating film is able to provide a sufficient step coverage in the contact window. The insulating film is formed over the surface of a semiconductor substrate or a first conductive film. The insulating film has an increasing or decreasing refractive index over the depth thereof. A contact window is formed by selectively removing a portion of the insulating film using a photoresist pattern formed over the surface of the insulating film. A structure thus formed is subjected to an etching process capable of etching the upper layer of the insulating film at an etching rate higher than that for the lower layer of the same to etch the side wall of the insulating film defining the contact window into a gently inclined curvilinear surface, and then the photoresist pattern is removed. A second conductive film is formed over the surface of a structure formed in the preceding step.

REFERENCES:
patent: 3966514 (1976-06-01), Feng et al.
patent: 4002512 (1977-01-01), Lim
patent: 4142004 (1979-02-01), Hauser Jr. et al.
patent: 4369090 (1983-01-01), Wilson et al.
patent: 4439270 (1984-03-01), Powell et al.
patent: 4684436 (1987-08-01), Burns et al.
patent: 4720395 (1988-01-01), Foster
"Influence of DC Bias Sputtering During Aluminum Metallization", James F. Smith, Solid State Technology, Jan. 1984, pp. 135-138.

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