Process for manufacturing a semi-conductor device of the type co

Details Process for manufacturing a semi-conductor device of the type co Process for manufacturing a semi-conductor device of the type co

1984-03-08

1985-09-10

Saba, William G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29576T, 29576E, 148 15, 148189, 148191, 148DIG3, 148DIG77, 148DIG150, 148DIG117, 156612, 156613, 156614, 156DIG64, 156DIG73, 156DIG95, 357 4, 357 49, H01L 2120, H01L 2176

Patent

active

045404526

ABSTRACT:
The invention provides a process comprising a step for depositing at least one intrinsic or doped monocrystalline silicon layer on a substrate, also monocrystalline, followed by a step for forming a thin silica layer at the level of the original substrate-silicon interface. The silica layer is obtained by oxidation through the substrate, followed by a heat treatment step during which the monocrystalline silicon is oxidized by the implanted oxygen ions. The first approach may take place according to two variants: thermal or plasma oxidation of the silicon-substrate interface. Oxidation takes place during the return to ambient temperature of the stack of layers after the deposit has been made.

REFERENCES:
patent: 4016006 (1977-04-01), Yoshinaka et al.
patent: 4147584 (1979-04-01), Garrison et al.
patent: 4177084 (1979-12-01), Lau et al.
patent: 4177321 (1979-12-01), Nishizawa
patent: 4275093 (1981-06-01), Sasaki et al.
patent: 4447497 (1984-05-01), Manasevit

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