Process for manufacturing a ROM cell with low drain capacitance

Fishing – trapping – and vermin destroying

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437 48, 437 45, H01L 2170, H01L 2700

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053288637

ABSTRACT:
A process which provides for the creation of regions of source and drain having different doping, wherein the doping, and thus the capacitance, of the drain regions is lower than that of the source regions.

REFERENCES:
patent: 4513494 (1985-04-01), Batra
patent: 4514897 (1985-05-01), Chiu et al.
patent: 4536944 (1985-08-01), Bracco et al.
patent: 4649629 (1987-03-01), Miller et al.
patent: 4649638 (1987-03-01), Fang et al.
patent: 4698787 (1987-10-01), Mukherjee et al.
patent: 4852062 (1989-07-01), Baker et al.
patent: 4868619 (1989-09-01), Mukherjee et al.
patent: 4874713 (1989-10-01), Gioia
patent: 4956308 (1990-09-01), Griffin et al.
patent: 5024960 (1991-06-01), Haken
patent: 5032881 (1991-07-01), Sardo et al.
patent: 5036017 (1991-07-01), Noda
patent: 5043294 (1991-08-01), Willer et al.
patent: 5141890 (1992-08-01), Haken
patent: 5155056 (1992-10-01), Jeong-Gyoo
Patent Abstracts of Japan, vol. 13, No. 304 (E-786) [3652], published Jul. 12, 1989, relating to Japanese Application JP-A-1 081 360, Hitachi Ltd., Mar. 27, 1989.
Patent Abstracts of Japan vol. 9, No. 85 (E-308) [1804], published Apr. 13, 1985, relating to Japanese Application JP-A-59 217 355, Hitachi Seisakusho K.K., Dec. 7, 1984.

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