Process for manufacturing a radiation hardened oxide

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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427255, 148 15, 357 54, 29576R, B05D 512

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041396588

ABSTRACT:
A pyrogenic oxide is grown on a silicon wafer in a furnace by oxidizing hydrogen in the presence of an excess amount of oxygen as well as anhydrous hydrogen chloride to produce steam within the furnace. After growing a suitable pyrogenic oxide layer, the hydrogen and hydrogen chloride flows are turned off while the oxygen flow is continued to grow a dry oxide. A nitrogen anneal while the wafer is slowly pulled from the furnace completes the hybrid, radiation hard oxide layer.

REFERENCES:
patent: RE28385 (1975-04-01), Mayer
patent: 3258359 (1966-06-01), Hugle
patent: 3336661 (1967-08-01), Polinsky
patent: 3666546 (1972-05-01), Reuter et al.
patent: 3692571 (1972-09-01), Colton et al.
patent: 4010290 (1977-03-01), Boland
Deal, Oxidaton of Silicon in Dry Oxygen, Wet Oxygen and Steam, Journ. of Electrochemical Society 6/63, pp. 527-533, vol. 10, No. 6.

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