Process for manufacturing a power semiconductor component

Details Process for manufacturing a power semiconductor component Process for manufacturing a power semiconductor component

1986-02-26

1989-01-31

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437245, 437203, 437228, 437238, 437165, 156653, H01L 21308

Patent

active

048015547

ABSTRACT:
A process for manufacturing a power semiconductor component having a component of this type is presented which has at least three consecutive layers and possessing a high current capacity and small power losses. For contacting the first two layers, the component has first second metallized contact planes, which impress a step-like structure onto a first surface of the component. The steps have a height of between 10 and 20 .mu.m and a width of between 20 and 300 .mu.m. The ratio between the surface area of the first contact plane and the surface area of the second contact plane is between 1 and 4. The first layer is heavily doped and has a maximum thickness of 8 .mu.m, and the second layer is lightly doped and has a maximum thickness of 40 .mu.m. According to the process for manufacturing the component, the surface structure according to the invention is produced essentially by a reactive ion-etching process with a single aluminum mask.

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