Process for manufacturing a power integrated circuit ("PIC") str

Details Process for manufacturing a power integrated circuit ("PIC") str Process for manufacturing a power integrated circuit ("PIC") str

1995-06-07

1996-09-17

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 41, 437 58, 437154, 437152, 148DIG126, H01L 2170, H01L 4900

Patent

active

055567924

ABSTRACT:
A PIC structure includes a lightly doped semiconductor layer of the first conductivity type superimposed over a heavily doped semiconductor substrate of a second conductivity type, wherein a Vertical IGBT and a driving and control circuit including at least first conductivity type-channel MOSFETs are integrated. The MOSFETs are provided inside well regions of the second conductivity type which are included in at least one lightly doped region of the first conductivity type completely surrounded and isolated from the lightly doped layer of the first conductivity type by means of a respective isolated region of a second conductivity type.

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