Process for manufacturing a JFET with an ion implanted stabiliza

Details Process for manufacturing a JFET with an ion implanted stabiliza Process for manufacturing a JFET with an ion implanted stabiliza

1981-07-20

1983-07-19

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 148175, 148187, 148 15, H01L 21265

Patent

active

043935753

ABSTRACT:
A semiconductor device wherein surface stabilization is provided by a shallow layer of ion implanted doping material on the surface of the semiconductor and beneath the passivating oxide layer. One embodiment is a bipolar transistor including a collector region, a base region and an emitter region, the base region being provided with the shallow ion implanted layer at the surface thereof. Another embodiment is a zener diode device with an anode region and a cathode region, the cathode region being provided with the shallow ion implanted layer at the surface thereof. Another embodiment is a JFET with a gate region and a source and drain region and a channel region extending through the gate region between the source and drain regions, the channel region being provided with the shallow ion implanted layer at the surface thereof.

REFERENCES:
patent: 3538399 (1970-11-01), Bresee et al.
patent: 3653978 (1972-04-01), Robinson et al.
patent: 3656031 (1972-04-01), Bresee et al.

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