Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of...
Patent
1997-03-05
1998-09-08
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
438350, 438365, 438368, H01L 21331
Patent
active
058044868
ABSTRACT:
A high-frequency bipolar transistor structure includes a base region of a first conductivity type formed in a silicon layer of a second conductivity type, the base region comprising an intrinsic base region surrounded by an extrinsic base region, an emitter region of the second conductivity type formed inside the intrinsic base region, the extrinsic base region and the emitter region being contacted by a first polysilicon layer and a second polysilicon layer respectively. The first and the second polysilicon layers are respectively contacted by a base metal electrode and an emitter metal electrode. Between the extrinsic base region and the first polysilicon layer, a silicide layer is provided to reduce the extrinsic base resistance of the bipolar transistor.
REFERENCES:
patent: 5006476 (1991-04-01), De Jong et al.
patent: 5198372 (1993-03-01), Verret
patent: 5232861 (1993-08-01), Miwa
patent: 5324983 (1994-06-01), Onai et al.
European Search Report from European Patent Application No. 94830512.3, filed Oct. 28, 1994.
Fallico Giuseppe
Zambrano Raffaele
Consorzio per la Ricerca sulla Microelectronica nel Mezzogiorno
Nguyen Tuan H.
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