Fishing – trapping – and vermin destroying
Patent
1995-06-07
1998-03-03
Nguyen, Tuan H.
Fishing, trapping, and vermin destroying
437 40, 437 6, 437154, H01L 21265
Patent
active
057233497
ABSTRACT:
A high conductivity IGBT integrated structure comprises a heavily doped semiconductor substrate of a first conductivity type constituting a first electrode of the IGBT, a lightly doped semiconductor layer of a second conductivity type superimposed over the substrate, at least one first doped region of the first conductivity type extending from a top surface of the lightly doped layer thereinto and constituting a channel region of the IGBT, and a second doped region of the second conductivity type extending from said top surface into the first doped region and constituting a second electrode of the IGBT. A buried layer of semiconductor material is sandwiched between the substrate and the lightly doped layer and is constituted by heavily doped regions of the second conductivity type intercalated with lightly doped regions of the second conductivity type.
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Consorzio pre la Ricerca sulla Microelettronica nel Mezzogiorno
Morris James H.
Nguyen Tuan H.
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