Process for manufacturing a DMOS transistor

Details Process for manufacturing a DMOS transistor Process for manufacturing a DMOS transistor

2005-04-12

2005-04-12

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S524000, C438S369000, C438S435000

Reexamination Certificate

active

06878603

ABSTRACT:
In a new process of making a DMOS transistor, the doping of the sloping side walls can be set independently from the doping of the floor region in a trench structure. Furthermore, different dopings can be established among the side walls. This is achieved especially by a sequence of implantation doping, etching to form the trench, formation of a scattering oxide protective layer on the side walls, and two-stage perpendicular and tilted final implantation doping. For DMOS transistors, this achieves high breakthrough voltages even with low turn-on resistances, and reduces the space requirement, in particular with regard to driver structures.

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