Process for manufacturing a CBRAM memory having enhanced...

Details Process for manufacturing a CBRAM memory having enhanced... Process for manufacturing a CBRAM memory having enhanced...

2008-10-13

2011-11-01

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Having selenium or tellurium elemental semiconductor component

C438S758000, C438S762000, C438S381000, C438S382000

Reexamination Certificate

active

08048713

ABSTRACT:
The invention relates to a process for manufacturing a plurality of CBRAM memories, each comprising a memory cell in a chalcogenide solid electrolyte, an anode, and a cathode, the process comprising implementing a sublayer of a high thermal conductivity material, higher than 1.3 W/m/K, which covers the set of contacts, then providing, on said sublayer, a triple layer comprising a chalcogenide layer, then an anodic layer, and a layer with second contacts (36), and finally an etching step.

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