Fishing – trapping – and vermin destroying
Patent
1995-06-07
1996-10-29
Nguyen, Tuan H.
Fishing, trapping, and vermin destroying
437143, 437154, 148DIG10, H01L 21265
Patent
active
055696120
ABSTRACT:
There is described a bipolar power transistor with high breakdown voltage, obtained in a heavily doped semiconductor substrate of the N type, over which a lightly doped N type layer, constituting a collector region of the transistor, is superimposed. The transistor has a base region comprising a heavily doped P type diffusion, which extends into the lightly doped N type layer from a top surface. The transistor further includes an emitter region constituted by a heavily doped N type diffusion extending from the top surface within said heavily doped P type diffusion. The heavily doped P type diffusion is obtained within a deep lightly doped P type diffusion, extending from said top surface into the lightly doped N type layer and formed with acceptor impurities of aluminum atoms.
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Coffa Salvatore
Frisina Ferruccio
Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno
Dorny Brett N.
Driscoll David M.
Morris James H.
Nguyen Tuan H.
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