Process for manufacture of radiation resistant power MOSFET and

Details Process for manufacture of radiation resistant power MOSFET and Process for manufacture of radiation resistant power MOSFET and

1987-01-08

1994-08-16

Walsh, Donald P.

Fishing, trapping, and vermin destroying

437 34, 437 40, H01L 21265

Patent

active

053386930

ABSTRACT:
A process for producing a radiation resistant power MOSFET is disclosed. The gate oxide is formed toward the end of the processing and is not exposed to substantial thermal cycling. Arsenic doping is used in the early part of the process to form the source region, and diffused too slowly to be adversely affected by later thermal cycling process steps. The source region has a relatively high resistance to act as a ballasting resistor to prevent burnout of one of a large number of parallel connected cells.

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HEXFETS Databook of 1985, published by the International Rectifier Corporation of El Segundo, Calif., pp. B-10 through B-12.
W. R. Dawes, Jr. et al., "Transient Hardened Power FETs", presented at The Nuclear Space and Radiation Effects Conference, sponsored by IEEE, Providence, R.I., Jul. 20-24, 1986, pp. 1-7.
G. P. Roper et al., "Development of a Radiation Hard N-Channel Power MOSFET", IEEE Transaction on Nuclear Science, vol. NS-30, No. 6, (Dec. 1983), pp. 4110 through 4115.
"Unveils Rad-Hard MOSFETs", Electronic Buyers' News, Jan. 12, 1987, p. 12.
D. Tunick, "Failure Mechanisms Probed for Rad-Hard Power MOSFETs", Electronic Design, (Nov. 27, 1986).
A. Bindra, "Rad-Hard Power MOSFETs", Electronic Engineering Letters, (Jan. 14, 1987).

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