Process for manufacture of composite semiconductor devices

Details Process for manufacture of composite semiconductor devices Process for manufacture of composite semiconductor devices

1995-12-13

2000-04-11

Graybill, David E.

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Assembly of plural semiconductive substrates each possessing...

438118, 438455, 156630, 156631, 156633, 1566591, 156622, 156657, H01L 2154, H01L 2158, H01L 2160

Patent

active

060487518

ABSTRACT:
An integrated semiconductor device is formed from two fabricated semiconductor devices each having a substrate by placing an etch-resist on the substrate of the one semiconductor device, by bonding the conductors of one of the fabricated semiconductor devices to the conductors of the other fabricated semiconductor device, flowing an uncured cement (e.g. epoxy) between the etch-resist and the other substrate, allowing the cement to solidify, and removing the substrate from the one of the semiconductor devices. More specifically, a hybrid semiconductor device is formed from a GaAs/AlGaAs multiple quantum well modulator having a substrate and an IC chip having a substrate by placing an etch resist on the modulator substrate, bonding the conductors of the modulator to the conductors of the chip, wicking an uncured epoxy between the modulators and the chip, allowing the epoxy to cure, and removing the substrate from the modulator.

REFERENCES:
patent: 4764804 (1988-08-01), Sahara et al.
patent: 4954458 (1990-09-01), Reid
patent: 5135878 (1992-08-01), Bartur
patent: 5478781 (1995-12-01), Bertin et al.

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