Process for making thyristor devices

Details Process for making thyristor devices Process for making thyristor devices

1984-08-08

1986-08-12

Ozaki, George I.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148190, 29571, 357 38, H01L 21383

Patent

active

046054510

ABSTRACT:
A governing factor of the switching characteristics of a thyristor device is base layer resistivity, for example in a gate turn-off device, to maximize load current it is preferably low but, the reverse breakdown voltage of the emitter-base junction is improved if the resistivity is high. The invention proposes a modified base layer dopant diffusion process in which the dopant diffusion process in which the dopant source is removed before completion in order that the peak of concentration is diffused-in below the surface so as to produce a graduated resistivity profile which increases nearer the surface. In shorted-emitter thyristors the surface region is masked during subsequent emitter diffusion so that the remaining short columns contain higher resistivity material.

REFERENCES:
patent: 3484309 (1969-12-01), Gilbert
patent: 3701696 (1972-10-01), Mets
patent: 4170502 (1979-10-01), Watakabe

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