Process for making thin film silicon-on-insulator wafers employi

Details Process for making thin film silicon-on-insulator wafers employi Process for making thin film silicon-on-insulator wafers employi

1992-04-10

1993-05-25

Fourson, George

Fishing, trapping, and vermin destroying

437 62, 437225, 437914, 437966, 437974, 148DIG12, H01L 2176

Patent

active

052139867

ABSTRACT:
A very thin silicon film SOI device can be made utilizing a bond and etch-back process. In the presently claimed invention, boron dopant is introduced into a surface of a silicon device wafer and the doped surface is bonded onto another silicon wafer at an oxide surface. The device wafer is thinned by etching down to the doped region and, by subsequent annealing in hydrogen, boron is diffused out of the silicon surface layer to produce very thin SOI films.

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Imai, K., "A New Thinning Method . . . Wafer Bonding", Japanese J. of Appl. Phys., vol. 30, No. 6, Jun. 1991, pp. 1154-1157.

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