Process for making structures including E2PROM nonvolatile memor

Details Process for making structures including E2PROM nonvolatile memor Process for making structures including E2PROM nonvolatile memor

1987-07-02

1988-10-25

Ozaki, George T.

Fishing, trapping, and vermin destroying

437 43, 437 44, 437190, H01L 21441

Patent

active

047804319

ABSTRACT:
The process provides for obtaining in the areas intended for the formation of the transistors windows in the intermediate oxide layer between the two silicon layers and, before final etching of the two silicon layers and the intermediate oxide, application of a mask formed in such a manner as to superimpose on the second silicon layer in the transistor areas coverings wider than the corresponding windows of the intermediate oxide layer.

REFERENCES:
patent: 4178674 (1979-12-01), Liu et al.
patent: 4180826 (1979-12-01), Shappir
patent: 4373249 (1983-02-01), Kosa et al.
patent: 4420871 (1983-12-01), Scheibe
patent: 4426764 (1984-01-01), Kosa et al.
patent: 4495693 (1985-01-01), Iwahashi et al.
patent: 4517732 (1985-05-01), Oshikawa
patent: 4597159 (1986-07-01), Usami et al.
patent: 4598460 (1986-07-01), Owens et al.
patent: 4612212 (1986-09-01), Masuoka
patent: 4719184 (1988-01-01), Cantarelli et al.
patent: 4735919 (1988-04-01), Faraone

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