Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2005-08-12
2009-02-24
Nguyen, Tuan H (Department: 2813)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S031000, C438S478000
Reexamination Certificate
active
07494831
ABSTRACT:
The invention relates to the production of a stacked structure of planes of islands of a first semiconducting material encapsulated in a second semiconducting material on a substrate, comprising alternate deposition of planes of islands of a first semiconducting material and encapsulation layers of a second semiconducting material, the planes of islands of the first semiconducting material being made at an optimum growth temperature and at an optimum precursor gas partial pressure to result in a stacked structure for which the optical properties enable production of optoelectronic components to optically interconnect integrated circuits. The stacked structure is made on a plane of islands of a third semiconducting material called the sacrificial plane encapsulated in a fourth semiconducting material, the islands of the sacrificial plane being made under growth conditions that can result in high densities of small islands, in other words at a temperature below the optimum growth temperature and/or at a precursor gas partial pressure greater than the optimum partial pressure.
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Damlencourt Jean-François
Vandelle Benoît
Commissariat a l''Energie Atomique
Nguyen Tuan H
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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