Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
2007-04-10
2007-04-10
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C117S013000, C117S014000, C117S015000, C117S019000
Reexamination Certificate
active
10963340
ABSTRACT:
A process for imparting controlled oxygen precipitation behavior to a single crystal silicon wafer. Specifically, prior to formation of the oxygen precipitates, the wafer bulk comprises dopant stabilized oxygen precipitate nucleation centers. The dopant is selected from a group consisting of nitrogen and carbon, and the concentration of the dopant is sufficient to allow the oxygen precipitate nucleation centers to withstand thermal processing, such as an epitaxial deposition process, while maintaining the ability to dissolve any grown-in nucleation centers.
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Banan Mohsen
Brunkhorst Stephen J.
Kulkarni Milind
Libbert Jeffrey L.
Mule'Stagno Luciano
Hiteshew Felisa
MEMC Electronic Materials , Inc.
Senniger Powers
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