Process for making silicon from halosilanes and halosilicons

Details Process for making silicon from halosilanes and halosilicons Process for making silicon from halosilanes and halosilicons

1986-11-18

1988-06-14

Sneed, Helen M. S.

Chemistry of inorganic compounds

Silicon or compound thereof

Elemental silicon

423350, 422129, 422158, 422209, 422241, 156DIG64, C01B 3302, B01J 808

Patent

active

047510676

ABSTRACT:
A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

REFERENCES:
patent: 4343772 (1982-08-01), Levin et al.
patent: 4668493 (1987-05-01), Levin

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