Process for making semiconductor devices passivated by an integr

Details Process for making semiconductor devices passivated by an integr Process for making semiconductor devices passivated by an integr

1977-11-16

1980-07-29

Tufariello, T. M.

Chemistry: electrical and wave energy

Processes and products

204 38B, 204192S, C25D 502, C23C 1500, C25D 712

Patent

active

042149533

ABSTRACT:
A method of making semiconductor devices passivated by an integrated heat sink comprises a layer-by-layer buildup of a silicon-based laminate, the creation of Mesa structures on one face of the laminate and of dissipator seats on the other face of the laminate by marking and etching processes, carrying out electrolytic growth of silver thermal dissipators and forming a metallic sheet and adhering same only to a selected exposed silicon N area.

REFERENCES:
patent: 4007104 (1977-02-01), Summers
patent: 4052269 (1977-10-01), Michel
patent: 4099318 (1978-07-01), Cooper
patent: 4104090 (1978-08-01), Pogge

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