Process for making semiconductor device

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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Details

29591, 156654, 156655, 357 65, H01L 21316

Patent

active

040229319

ABSTRACT:
A semiconductor device having metallization consisting essentially of beryllium. The beryllium makes ohmic contact by deposition on a substrate at 300.degree. C-400.degree. C or it is deposited at lower temperatures and then heat treated to render ohmic the contact to the semiconductor device.

REFERENCES:
patent: 3573974 (1971-04-01), Castrucci et al.
patent: 3620847 (1971-11-01), Wise
patent: 3704166 (1972-11-01), Cuomo et al.

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