Process for making semiconductor acceleration sensor having anti

Details Process for making semiconductor acceleration sensor having anti Process for making semiconductor acceleration sensor having anti

1993-03-26

1995-03-07

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 90, 437927, H01L 21465

Patent

active

053958020

ABSTRACT:
A semiconductor acceleration transducer is fabricated so that the semiconductor beam and the piezoelectric transducing element are accurately positioned relative to each other, and the impact resistance is improved. The fabrication process comprises a wafer preparing step for forming a buried layer between a substrate of a first conductivity type and an epitaxial layer of a second conductivity type, a doping step for forming a diffusion region of the first conductivity type in the epitaxial layer, and an etching step for removing unwanted portions of the substrate and the diffusion region from the bottom of the substrate to shape the beam supporting portion serving as a seismic mass. The buried layer is formed at such a position that the shape and position of the beam is determined by the buried layer. The buried layer may be a second conductivity type layer to determine the contour of the beam by stopping the etching process or may be a first conductivity type layer which is etched away to determine the contour of the beam with its diffusion contour.

REFERENCES:
patent: 4332000 (1982-05-01), Petersen
patent: 4618397 (1986-10-01), Shimizu et al.
patent: 4721938 (1988-01-01), Stevenson
Roylance et al., "A Batch-Fabricated Silicon Accelerometer," IEEE Trans. Electron Devices, vol. ED-26, No. 12, pp. 1911-1917 (Dec. 1979).

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