Process for making semi-conductor devices

Details Process for making semi-conductor devices Process for making semi-conductor devices

1980-06-17

1982-08-10

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

148187, 148188, H01L 21225

Patent

active

043430813

ABSTRACT:
The present invention relates to a process for making semi-conductor components on an amorphous substrate, comprising two phases, wherein, in a first phase, the substrate is introduced into a deposition chamber and a uniform deposit is made of four successive primary layers on all this substrate, without contact with the outside atmosphere: a first layer of protective insulating material, a second layer of semiconductor material, a third layer of insulating material, of smaller thickness than the first layer, and finally a fourth layer of a metal; and, in a second phase, the substrate coated with these four layers is withdrawn from the deposition chamber and the last three layers are subjected to photoetching and ancillary deposition operations, which are appropriate for the structure of the component to be obtained.

REFERENCES:
patent: 3258663 (1966-06-01), Weimer
patent: 3298863 (1967-01-01), McCusker
patent: 3423821 (1969-01-01), Nishimura
patent: 3436620 (1969-04-01), Diemer et al.
patent: 3470610 (1969-10-01), Breitweiser
patent: 3520051 (1970-07-01), Topfer et al.
patent: 3616527 (1971-11-01), Janning

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