Process for making self aligned field isolation regions in a sem

Details Process for making self aligned field isolation regions in a sem Process for making self aligned field isolation regions in a sem

1984-09-14

1986-07-15

Roy, Upendra

Metal treatment

Compositions

Heat treating

29571, 29576B, 148187, 156643, 156653, 156654, 357 91, H01L 2122, H01L 21265

Patent

active

046004459

ABSTRACT:
A process is provided for making semiconductor structures, such as CMOS structures, which includes forming on a surface of a semiconductor body a layer from a material which is impervious to oxygen diffusion therethrough and patterning this layer to define the position of both the active and field isolation regions by partially removing this layer from the areas where the field isolation regions are to be formed. This oxygen impervious layer may be a dual dielectric structure consisting of a layer of silicon dioxide adjoining the semiconductor body and a layer of silicon nitride adjoining the silicon dioxide. The resulting structure includes an oxygen impervious layer which is used both for protecting all underlying oxidizing regions from oxidation and for defining the position of the active regions of the structure.

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