Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1980-03-21
1983-01-11
Ozaki, G.
Metal working
Method of mechanical manufacture
Assembling or joining
29577C, 148187, 357 59, H01L 2122
Patent
active
043675808
ABSTRACT:
Polycrystalline silicon resistor elements are formed in MOS integrated circuits by a method which requires no additional mask and etch steps other than a standard double-level poly process. The resistors are defined in first level polysilicon which also forms floating gates in FAMOS devices. The resistors are masked by the second level poly which is patterned to define control gates for the FAMOS cells at the same time as the resistor mask is created. The first level poly is implanted at a level which produces the desired resistivity, which is same as the necessary doping level for the floating gates. FAMOS cells are floating gate MOS transistors which are electrically programmable and may also be electrically erasable or electrically alterable.
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Graham John G.
Ozaki G.
Texas Instruments Incorporated
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