Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode
Reexamination Certificate
2007-07-10
2007-07-10
Tran, Thien F (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Bidirectional rectifier with control electrode
C257S131000, C257S611000, C257S612000, C257S913000, C257SE21388
Reexamination Certificate
active
10911965
ABSTRACT:
An electronic power device comprising a single crystal silicon segment being characterized in that the segment comprises a non-uniform distribution of minority carrier recombination centers, the minority carrier recombination centers comprising a substitutional metal, with the concentration of the centers in a bulk layer being greater than the concentration in a surface layer. The centers have a concentration profile in which the peak density of the centers is at or near the central plane with the concentration generally decreasing from the position of peak density in the direction of the front surface of the segment and generally decreasing from the position of peak density in the direction of the back surface of the segment.
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MEMC Electronic Materials , Inc.
Senniger Powers
Tran Thien F
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