Process for making n-channel or p-channel permeable base transis

Details Process for making n-channel or p-channel permeable base transis Process for making n-channel or p-channel permeable base transis

1997-08-19

1998-09-29

Niebling, John

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Permeable or metal base

438193, 148DIG11, H01L 21331

Patent

active

058145486

ABSTRACT:
A method for producing an electronic component with a plurality of layers fabricating in a laminated composite, comprising laterally structuring at least one of the layers having a p or n conductivity characteristic by forming one of the layers in a sieve shape with a multiplicity of openings therein on a second layer of a different p or n conductivity characteristic than that of the one of the layers so that a space charge zone is formed in the second of the layers at boundaries of the one of the layers along the openings in the one of the layers.

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