Process for making molybdenum gate and titanium silicide contact

Details Process for making molybdenum gate and titanium silicide contact Process for making molybdenum gate and titanium silicide contact

1985-09-03

1987-02-10

Ozaki, George T.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29591, 156656, H01L 21441

Patent

active

046414177

ABSTRACT:
Molybdenum-gate transistors with self-aligned, silicided source/drain regions are made by a process that avoids unwanted etching of the molybdenum of the gate when the unreacted metal used for siliciding is removed. The molybdenum gate is protected by encapsulating with a cap oxide and sidewall oxide; this encapsulation is applied in a manner to seal the interfaces between the two oxides. The oxides may be dual layer--first plasma deposited then phosphorus doped CVD oxide. A dilute sulphuric acid etch may be used to remove unreacted titanium employed for the siliciding.

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patent: 4485550 (1984-12-01), Koeneke et al.
patent: 4505027 (1985-03-01), Schwabe et al.
patent: 4521952 (1985-06-01), Riseman
patent: 4575920 (1986-03-01), Tsunashima

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