Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2007-03-27
2007-03-27
Goudreau, George A. (Department: 1763)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S701000, C438S717000, C438S734000, C438S736000, C438S737000, C438S739000, C438S749000
Reexamination Certificate
active
10691139
ABSTRACT:
An exemplary method for making a memory structure having different-sized memory cell layers comprises forming at least two layers of ferromagnetic materials, forming at least one mask layer above the ferromagnetic materials, patterning the at least one mask layer, etching the ferromagnetic materials using the at least one mask layer as a first etch transfer mask, laterally reducing a planar dimension of the at least one mask layer to be narrower than the ferromagnetic materials, and etching a layer of the ferromagnetic materials using the reduced at least one mask layer as a second etch transfer mask, such that the ferromagnetic layer being etched becomes a different lateral size than another ferromagnetic layer of the ferromagnetic materials.
REFERENCES:
patent: 6110751 (2000-08-01), Sato et al.
patent: 6404674 (2002-06-01), Anthony et al.
patent: 6528326 (2003-03-01), Hiramoto et al.
patent: 6570783 (2003-05-01), Deak
patent: 6664785 (2003-12-01), Kohlstedt
patent: 6683815 (2004-01-01), Chen et al.
patent: 6781173 (2004-08-01), Tuttle et al.
patent: 6852550 (2005-02-01), Tuttle et al.
Anthony Thomas C.
Sharma Manish
LandOfFree
Process for making magnetic memory structures having... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for making magnetic memory structures having..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for making magnetic memory structures having... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3760373