Process for making integrated circuit structure comprising local

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437200, H01L 21441

Patent

active

056704259

ABSTRACT:
A local area interconnect structure comprising one or more electrically conductive interconnects formed from electrically conductive metal compounds is described and a process for forming same. Electrically conductive metal compounds are selectively deposited in one or more trenches which were previously formed in an insulation layer in a configuration conforming to the desired pattern of the electrically conductive interconnects. A seed layer is first selectively formed on surfaces of the trenches and the electrically conductive metal compound is then selectively deposited over the seed layer in the trench, but not on the exposed surfaces of the insulation layer.

REFERENCES:
patent: 4822753 (1989-04-01), Pintchouski et al.
patent: 4952521 (1990-08-01), Goto
patent: 4957777 (1990-09-01), Ilderem et al.
patent: 5173450 (1992-12-01), Wei
patent: 5242847 (1993-09-01), Ozturk et al.
patent: 5354712 (1994-10-01), Ho et al.
patent: 5484747 (1996-01-01), Chien
patent: 5618756 (1997-04-01), Chew et al.
M. Kato et al "Nucleation Control of Silicon-Germanium on silicon oxide for selective epitoxy" Ext. Abstr. 22nd Conf. on Solid State Device (Aug. 1990) pp. 329-332 (Abstract Only).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process for making integrated circuit structure comprising local does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for making integrated circuit structure comprising local, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for making integrated circuit structure comprising local will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1938519

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.