Process for making III-V devices

Details Process for making III-V devices Process for making III-V devices

1974-11-18

1976-05-25

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Methods

148171, 148175, 156 7, 156 17, 156621, 313103R, H01L 21208

Patent

active

039590453

ABSTRACT:
A very thin high quality active layer of a III-V material such as GaAs is formed on a temporary substrate on which an etch-resistant stopping layer of a material such as AlGaAs has been previously formed. Passivating layers are formed on the active layer, and the active layer is interfaced with a material which forms a permanent substrate. The temporary substrate is etched away with an etchant which is stopped by the stopping layer, following which the stopping layer is removed by etching with HF. The material in the active layer acts as a chemical stop for the HF, and consequently the etching process stops automaticaly at the boundary of the active layer, leaving that layer in the thin high-quality form in which it is grown. The etching rate of the stopping layer can be controlled by the proportion of Al in that layer.

REFERENCES:
patent: 3288662 (1966-11-01), Weisberg
patent: 3721593 (1973-03-01), Hays et al.
patent: 3767494 (1973-10-01), Muroaka et al.
patent: 3769536 (1973-10-01), Antypas et al.

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