Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature
Patent
1995-09-07
1997-09-16
Tsai, Jey
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having substrate registration feature
438587, H01L 218246
Patent
active
056680309
ABSTRACT:
A process for fabricating identification alphanumeric code markings on the substrate of mask ROM devices is disclosed. The fabrication process comprises first forming a deposited layer on the substrate of the mask ROM device. A photoresist layer is then formed on the deposited layer. A photomask layer by is then shaped by forming a pattern on the photoresist layer that reveals the channel regions of the memory cell transistors to be programmed into the blocking state, as well as reveals the graphical pattern of the alphanumeric code marking. An etching procedure then removes the portion of the deposited layer revealing the graphical pattern of the alphanumeric code markings. The photomask layer is then removed. A code implantation procedure may precede or follow the etching procedure to facilitate the programming of the memory cells of the mask ROM device.
REFERENCES:
patent: 4364167 (1982-12-01), Donley
patent: 5051374 (1991-09-01), Kagawa et al.
Chung Chen-Hui
Sheng Yi-Chung
Su Kuan-Cheng
Tsai Jey
United Microelectronics Corporation
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