Process for making field effect and bipolar transistors on the s

Details Process for making field effect and bipolar transistors on the s Process for making field effect and bipolar transistors on the s

1976-10-06

1977-08-30

Dost, Gerald A.

Metal working

Method of mechanical manufacture

Assembling or joining

B01J 1700

Patent

active

040444520

ABSTRACT:
A process and the resulting structure for making metal oxide silicon field effect transistors and vertical bipolar transistors on the same semiconductor chip with the devices being dielectrically isolated from each other. The process does not require an epitaxial layer. The bipolar devices have utility as cross-chip or off-chip drivers or can be utilized for analog circuitry.

REFERENCES:
patent: 3955269 (1976-05-01), Magdo et al.

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