Process for making electroluminescent films and devices

Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating

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C23C 1500

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042797268

ABSTRACT:
A process for making electroluminescent films and devices by sputtering. Zinc sulfide, manganese, and copper sputtering targets are arranged in a circular configuration. RF voltages, applied to the targets, cause sputtering of the target materials. A transparent substrate with a transparent electrode formed thereon is rotated beneath the sputtering targets. An electroluminescent film including the target materials is formed on the upper surface of the transparent electrode. Concentration of the target materials in the electroluminescent film can be controlled by controlling the rf voltages applied to the sputtering targets. An electroluminescent device is completed by depositing a second electrode on the upper surface of the electroluminescent film and applying a forming voltage between the electrodes.

REFERENCES:
patent: 3803438 (1974-04-01), Hanak
patent: 4098919 (1978-07-01), Morimoto et al.
patent: 4137481 (1979-01-01), Hilsum et al.
C. Misiano et al., "Co-sputtered Optical Films," Vacuum vol. 27, pp. 403-406 (1977).
Hanak et al., "DC Electroluminescent Flat Panel Display," U.S. Army Electronics Command R&D Report, ECOM-0290-F, Aug. 1973, pp. 13-27, 85-98.
M. I. Abdalta et al., "Low Voltage D.C. Electroluminescence In ZnS(Mn, Cu) Thin Films," Proc. S.I.D., vol. 19, pp. 91-95, 3rd quarter, 1978.
J. L. Plumb, "D.C. Characteristics of Electroluminescent Evaporated ZnS:Mn, Cu, Cl Films," Japan J. Appl. Phys., vol. 10, pp. 326-331 (1971).
W. A. Thornton, "D.C. Electroluminescence In Zinc Sulfide Films," J. Appl. Phys., vol. 33, pp. 3045-3048 (1962).
J. J. Hanak, "Electroluminescence in ZnS:Mn.sub.x :Cu.sub.y RF-Sputtered Films," Proc. 6th Int'l. Vacuum Congr., Japan J. Appl. Phys., Suppl. 2, Pt. 1 (1974), pp. 809-812.

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