Process for making diamond, and doped diamond films at low tempe

Details Process for making diamond, and doped diamond films at low tempe Process for making diamond, and doped diamond films at low tempe

1989-06-30

1990-10-09

Beck, Shrive

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 39, 427 42, 4272551, 423446, 20419231, C23C 1600, C23C 1626, C23C 1648, C23C 1650

Patent

active

049619586

ABSTRACT:
A process and apparatus that may be used for the production of diamond and doped diamond films at high rates by activated reactive vapor deposition. Carbon is evaporated in a vacuum chamber in the presence of atomic hydrogen containing plasma to form diamond precursors which then deposit on a substrate located within the vacuum chamber. The substrate temperature is maintained at between about 20.degree.-600.degree. C.

REFERENCES:
patent: 4707384 (1987-11-01), Schachner et al.
patent: 4725345 (1988-02-01), Sakamoto et al.
patent: 4816291 (1989-03-01), Desphandey et al.

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