Process for making contacts and interconnects for holes having v

Details Process for making contacts and interconnects for holes having v Process for making contacts and interconnects for holes having v

1984-07-11

1988-01-26

Hearn, Brian E.

Fishing, trapping, and vermin destroying

357 68, 357 71, 437203, H01L 21283

Patent

active

047209089

ABSTRACT:
A contact and interconnect for an MOS VLSI semiconductor device employs a contact hole in an insulator coating; the contact hole has vertical instead of sloped sidewalls. A first metallization is applied by CVD so that the sidewalls will be coated to a uniform thickness, then this first metal is anisotropically etched to leave metal sidewalls. A second metallization is applied by sputtering or evaporation, which provides a more dense and electromigration-resistant coating. A refractory metal layer may be interposed between the metallization and the silicon substrate, and also between the metal interconnect and the insulator, since the insulator usually contains phosphorus.

REFERENCES:
patent: 4291322 (1981-09-01), Clemens et al.
patent: 4502210 (1985-03-01), Okumura et al.
patent: 4507853 (1985-04-01), McDavid
patent: 4532702 (1985-08-01), Gigante et al.
patent: 4562640 (1986-01-01), Widmann et al.
patent: 4589196 (1986-05-01), Anderson

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