Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Patent
1995-08-23
1997-12-02
Niebling, John
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
H01G 915
Patent
active
056931042
ABSTRACT:
A process of making a capacitor element for a solid electrolytic capacitor is provided which comprises the steps of preparing at least one capacitor piece which includes a chip of a sintered mass of metal powder and an anode wire projecting from the chip, forming a dielectric layer on the chip, forming a solid electrolyte layer on the chip, forming a metal layer on the chip, and cutting the metal wire at a position spaced from the chip. A water-repellent member is fitted on the anode wire and located close to the chip at least up to finishing the step of forming the solid electrolyte layer. Further, the water-repellent member is shifted along the anode wire away from the chip at least before cutting the anode wire, whereas the anode wire is cut at a position between the chip and the shifted water-repellent member.
REFERENCES:
patent: 3621342 (1971-11-01), Yoshimura
patent: 3624458 (1971-11-01), Howell et al.
patent: 4067786 (1978-01-01), Hilbert et al.
patent: 4173062 (1979-11-01), Locke
patent: 4943892 (1990-07-01), Tsuchiya et al.
patent: 5483415 (1996-01-01), Nakamura et al.
Bednarek Michael D.
Bilodeau Thomas G.
Niebling John
Rohm & Co., Ltd.
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