Process for making bipolar transistor

Details Process for making bipolar transistor Process for making bipolar transistor

1989-08-10

1991-04-23

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 26, 437 38, 437162, 437203, 148DIG157, 357 34, H01L 21331

Patent

active

050100262

ABSTRACT:
A bipolar transistor has a base region consisting of a graft base region, linking base region and an intrinsic base region, and a diffusion suppressing region of an opposite conductivity type to that of the base region is formed at least at the lower portion of the intrinsic base region. The junction depth of the linking base region is selected to be shallower than that of the intrinsic base region. Since the base to base linking is performed in the linking base region, collision between the intrinsic base region and the graft base region is inhibited, while the diffusion of the base width beyond the diffusion suppressing region is also inhibited. The junction depth of the linking base region is selected to be shallow to prevent the width of the parasitic base from being increased to suppress the side injection effect.

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Antipov, I., IBM Technical Disclosure Bulletin, vol. 27, No. 8, Jan. 1985, pp. 4931-4933.

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