Process for making BiCMOS integrated circuit having a shallow tr

Details Process for making BiCMOS integrated circuit having a shallow tr Process for making BiCMOS integrated circuit having a shallow tr

1989-08-03

1990-02-20

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 31, 437 33, 437 58, 437 38, 437203, H01L 21283, H01L

Patent

active

049026399

ABSTRACT:
An improved bipolar transistor of a BiCMOS integrated circuit is fabricated by utilizing a shallow trench structure. The shallow trench defines an active base and a self-aligned emitter. The base resistance of the transistor is reduced because a vertical, rather than lateral, link base, which connects an extrinsic base to the active base, is formed. In addition, the overall area is reduced, which provides for a lower collector to base capacitance.

REFERENCES:
patent: 4483726 (1984-11-01), Isaac et al.
patent: 4546536 (1985-10-01), Anantha et al.
patent: 4745080 (1988-05-01), Scovell et al.
patent: 4774206 (1988-09-01), Willen
patent: 4818713 (1989-04-01), Feygenson
patent: 4847670 (1989-07-01), Monkowski et al.

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