Process for making backside illuminated image sensors

Details Process for making backside illuminated image sensors Process for making backside illuminated image sensors

1992-07-24

1993-07-13

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437225, 437236, 437974, 148DIG12, 148DIG135, H01L 3118

Patent

active

052273130

ABSTRACT:
A process for making a backside illuminated image sensor fabricated upon a thinned silicon layer bonded to a quartz wafer is described. A borosilicate glass (BSG) layer interposed between the thinned silicon device layer and quartz support serves as a doping source for the back-surface accumulating electrostatic potential and serves to minimize stress associated with the thermal expansion differences associated with quartz and silicon.

REFERENCES:
patent: 3508980 (1970-04-01), Jackson, Jr. et al.
patent: 4266334 (1981-05-01), Edwards et al.
patent: 4840918 (1989-06-01), Sheu et al.
patent: 4946716 (1990-08-01), Corrie
patent: 4980308 (1990-12-01), Hayashi et al.
patent: 4983251 (1991-01-01), Haisma et al.
patent: 5013681 (1991-05-01), Godbey et al.
patent: 5054683 (1991-10-01), Haisma et al.
patent: 5102821 (1992-04-01), Moslehi
patent: 5110748 (1992-05-01), Sarma
Janesick et al., "Charge Coupled Device Pinning Technologies", SPIE Optical Sensors and Electronic Photography, vol. 1071-15, Jan. 1989.
Huang et al., A Wafer-Scale Thinning Process for High Performance Silicon Devices, Abstract, 481, 174th Electrochem. Soc. Mtg., 88(2), 705, 1988.
Maszara et al., Bonding of Silicon Wafers for Silicon-on-Insulator, J. Appl. Phys., 64(10), 4943, Nov. 1988.
Blouke et al., Large Format, High Resolution Image Sensors, Optical Engineering, vol. 26, No. 9, 837, 1987.
M. Kimura et al., Epitaxial Film Transfer Technique for Producing Single Crystal Si Film on an Insulating Substrate, Appl. Phys. Lett., vol. 43, No. 3, Aug. 1983, 263-265.
R. A. Stern et al., Optical Engineering, vol. 26, No. 9, 875, (1987), "Ultraviolet and Extreme Ultraviolet response of CCD Detectors".
C. M. Huang et al., Proceedings 1991 IEEE CCD Workshop, University of Waterloo, (1991), "Quantum Efficiency Model for P.sup.+ doped Back Illuminated CCD Imager".
G. Goetz et al., Abstract No. 309, 177th Electrochemical Society Meeting, 90-1, 462, (1990), "Heterostructures by Generalized Bonding Techniques".
H. Seidel et al., J. Electrochemical Society, vol. 137, No. 11, 3626, (1990), "Anisotropic Etching of Crystalline Si in Alkaline Solutions".
H. Muraoka et al., "Controlled Preferential Etching Technology", in Semiconductor Silicon, 1973, pp. 327-338.
M. M. Blouke, Proc. SPIE, 1439, (1990), "Model of a Thinned CCD".
R. Stern et al., Instrumentation in Astronomy VI, D. C. Crawford Ed., Proc. SPIE 627, 583, (1986), "EUV Astronomical Spectroscopy with CCD Detectors".
Kern et al., J. Electrochemical Soc., vol. 117, No. 4, 562 and 568, (1970), "CVD of Silicate Glass for Use with Silicon Devices".
J. L. Gray, Phd. Thesis, Purdue University, West Lafayette, Ind., Aug. 1982, "Two Dimensional Modeling of Silicon Solar Cells", 1-125.
C. P. Ho et al., Technical Report No. SEL 84-001, Sanford Univ. Electronics Lab., Stanford Univ., Stanford, Calif., Jul. 1984, "Suprem III--A Program for IC Process Modeling and Simulation".
Deal et al., J. Electrochemical Society, vol. 114, 267, (1967), "Characteristics of the Surface State Charge of Thermally Oxidized Silicon".
R. R. King et al., IEEE Trans. on Electron Devices, vol. 38, 1399, (1991), No. 6, "Studies of Diffused Boron Emitters: Saturation Current, . . . ".
A. S. Grove, Physics and Technology of Semiconductor Devices, John Wiley, New York, 1967, pp. 144-145.
Handbook of Optics, Optical Society of America, McGraw-Hill, 6-94, (1978), FIG. 6C-83, W. G. Driscou.

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